丝印：LED624；Package：TO-281；N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance, superior

文件：1.30766 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance, superior

文件：1.30766 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Super high dense cell design for low RDS(ON).

文件：116.59 Kbytes 页数：8 Pages

Samhop

三合微科

N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance, superior

文件：1.30766 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体