丝印：LED624；Package：TO-220；N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance, superior

文件：1.30766 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Super high dense cell design for low RDS(ON).

文件：116.59 Kbytes 页数：8 Pages

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N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance, superior

文件：1.30766 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Split Bobbin-Printed Circuit Transformers Single & Dual Primaries

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