Super high dense cell design for low RDS(ON).

文件：116.59 Kbytes 页数：8 Pages

Samhop

三合微科

Super high dense cell design for low RDS(ON).

Samhop

三合微科

N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance, superior

文件：1.30766 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Split Bobbin-Printed Circuit Transformers Single & Dual Primaries

文件：35.95 Kbytes 页数：2 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

14 PIN DIP LOW FREQUENCY SINEWAVE

文件：57.23 Kbytes 页数：1 Pages

Connor-Winfield