丝印：LED625H；Package：TO-281；N-channel 650 V, 1.7 Ω typ., 4.5 A Power MOSFET in I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low

文件：1.2383 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：LED625H；Package：TO-220；N-channel 650 V, 1.7 Ω typ., 4.5 A Power MOSFET in I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low

文件：1.2383 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：LED625H；Package：IPAK；N-channel 650 V, 1.7 Ω typ., 4.5 A Power MOSFET in I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low

文件：1.2383 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体