丝印：LET；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 600W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.25781 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：LET9060；Package：PowerSO-10RF；RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件：225.91 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：LET9060S；Package：PowerSO-10RF；RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件：225.91 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：LET9060S；Package：PowerSO-10RF；RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件：225.91 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：LET9060；Package：PowerSO-10RF；RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件：225.91 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：LETB；Package：VSSOP；LP3982 Micropower, Ultra-Low-Dropout, Low-Noise, 300-mA CMOS Regulator

1 Features 1• 2.5-V to 6-V Input Range • MAX8860 Pin, Package, and Specification Compatible • 300-mA Output Current • 120-mV Typical Dropout at 300 mA • 90-μA Typical Quiescent Current • 1-nA Typical Shutdown Mode • 60-dB Typical PSRR • 120-μs Typical Turnon Time • Stable With Small Cera

文件：689.03 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LETB；Package：VSSOP；LP3982 Micropower, Ultra-Low-Dropout, Low-Noise, 300-mA CMOS Regulator

1 Features 1• 2.5-V to 6-V Input Range • MAX8860 Pin, Package, and Specification Compatible • 300-mA Output Current • 120-mV Typical Dropout at 300 mA • 90-μA Typical Quiescent Current • 1-nA Typical Shutdown Mode • 60-dB Typical PSRR • 120-μs Typical Turnon Time • Stable With Small Cera

文件：689.03 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LETB；Package：VSSOP；LP3982 Micropower, Ultra-Low-Dropout, Low-Noise, 300-mA CMOS Regulator

1 Features 1• 2.5-V to 6-V Input Range • MAX8860 Pin, Package, and Specification Compatible • 300-mA Output Current • 120-mV Typical Dropout at 300 mA • 90-μA Typical Quiescent Current • 1-nA Typical Shutdown Mode • 60-dB Typical PSRR • 120-μs Typical Turnon Time • Stable With Small Cera

文件：689.03 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LETB；Package：VSSOP；LP3982 Micropower, Ultra-Low-Dropout, Low-Noise, 300-mA CMOS Regulator

1 Features 1• 2.5-V to 6-V Input Range • MAX8860 Pin, Package, and Specification Compatible • 300-mA Output Current • 120-mV Typical Dropout at 300 mA • 90-μA Typical Quiescent Current • 1-nA Typical Shutdown Mode • 60-dB Typical PSRR • 120-μs Typical Turnon Time • Stable With Small Cera

文件：689.03 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LET9060；Package：PowerSO-10RF；RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件：225.91 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体