丝印：LET9060；Package：PowerSO-10RF；RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件：225.91 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：LET9060；Package：PowerSO-10RF；RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件：225.91 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

60W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package

The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain, linearity and • Excellent thermal stability\n• Common source configuration• POUT= 60 W with 17.2 dB gain @ 960 MHz / 28 V\n• New RF plastic package;

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Package：PowerSO-10RF 裸露底部焊盘（2 条成形引线）；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC RF POWER MOSFET N-CH PWRSO10

STMICROELECTRONICS

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RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF power transistor, designed for high gain broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1.0 GHz. LET9060C boasts the excellent gain, linearity and r

文件：36.63 Kbytes 页数：5 Pages

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RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件：296.25 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：LET9060S；Package：PowerSO-10RF；RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件：225.91 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：LET9060S；Package：PowerSO-10RF；RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件：225.91 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

文件：164.49 Kbytes 页数：9 Pages

STMICROELECTRONICS

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60W 28V HF to 2GHz LDMOS TRANSISTOR in flangeless package

The LET9060F is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9060F is designed for high gain and broadband performance operating in common source mode at 28 V. It • Excellent thermal stability\n• Common source configuration\n• POUT (@ 28 V)= 60 W with 18 dB gain @ 945 MHz• POUT (@ 36 V)= 90 W with 18 dB gain @ 945 MHz\n• BeO free package\n• In compliance with the 2002/95/EC european directive;

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