丝印：LED525；Package：TO-220；N-channel 525 V, 1.2 Ω typ., 5.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance and very g

文件：1.62012 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N-channel 525 V, 1.2 Ω typ., 5.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance and very g

文件：1.62012 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

14 PIN DIP HIGH SPEED SINEWAVE

文件：54.64 Kbytes 页数：1 Pages

Connor-Winfield

Industrial 5 Port PoE 10/100 Ethernet Switch

文件：1.35808 Mbytes 页数：4 Pages

BLACKBOX