SMF4L12A

Marking：LE；Package：SOD-123FL；Transient Voltage Suppressors

SMF4L12A

Marking：LE；Package：SOD-123FL；Transient Voltage Suppressor

SMF4L12A

Marking：LE；Package：SOD-123FL；Transient Voltage Suppressor

SSDJ12A

Marking：LE；Package：SOD-123RL；200W Peak Power Surface Mount TVS

TLV9041IDPWR

Marking：LE；Package：X2SON；TLV904x 1.2-V Ultra Low Voltage, 10關A Micro-Power RRIO Amplifier for Power Conscious Applications

2SC3052

Marking：LE/LF/LG；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ●Lowcollectortoemittersaturationvoltage. ●ExcellentlinearityofDCforwardcurrentgain. ●Superminipackageforeasymounting. APPLICATIONS ●ForhybridIC,smalltypemachinelowfrequencyvoltageamplifyapplication.

AAT3221IJS-3.2-T1

Marking：LEXYY；Package：SC70JW-8；150 mA NanopowerTM LDO Linear Regulator

Features •Quiescentcurrent:1.1μA •Lowdropout:200mV(typical) •Guaranteedoutput:150mA •Highaccuracy:±2 •Currentlimitprotection •Over-temperatureprotection •Extremelylowpowershutdownmode •Lowtemperaturecoefficient •Factory-programmedoutputvoltages:1.5Vto3.

BF660

Marking：LEs；Package：SOT-23；PNP Silicon RF Transistor (For VHF oscillator applications)

PNPSiliconRFTransistor ●ForVHFoscillatorapplications

BSR302N

Marking：LEs；Package：PG-SC-59；OptiMOS 2 Small-Signal-Transistor

Features •N-channel •Enhancementmode •Logiclevel(4.5V) •Avalancherated •FootprintcompatibletoSOT23 •dv/dtrated •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101

DMN62D0UDWQ-13

Marking：LEE；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAnti