STFILED625H

Marking：LED625H；Package：TO-281；N-channel 650 V, 1.7 Ω typ., 4.5 A Power MOSFET in I2PAKFP, TO-220 and IPAK packages

Features •100avalanchetested •Extremelyhighdv/dtcapability •Gatechargeminimized •Verylowintrinsiccapacitance •Improveddiodereverserecovery characteristics •Zener-protected Applications •LEDlightingapplications Description ThesePowerMOSFETsboastextremelylow

STPLED525

Marking：LED525；Package：TO-220；N-channel 525 V, 1.2 Ω typ., 5.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features •100avalanchetested •Extremelyhighdv/dtcapability •Verylowintrinsiccapacitance •Improveddiodereverserecovery characteristics •Zener-protected Applications •LEDlightingapplications Description ThesePowerMOSFETsboastextremelylowonresistance andveryg

STPLED624

Marking：LED624；Package：TO-220；N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features •100avalanchetested •Extremelyhighdv/dtcapability •Verylowintrinsiccapacitance •Improveddiodereverserecovery characteristics •Zener-protected Applications •LEDlightingapplications Description ThesePowerMOSFETsboastextremelylowonresistance, superior

STPLED625H

Marking：LED625H；Package：TO-220；N-channel 650 V, 1.7 Ω typ., 4.5 A Power MOSFET in I2PAKFP, TO-220 and IPAK packages

Features •100avalanchetested •Extremelyhighdv/dtcapability •Gatechargeminimized •Verylowintrinsiccapacitance •Improveddiodereverserecovery characteristics •Zener-protected Applications •LEDlightingapplications Description ThesePowerMOSFETsboastextremelylow

STULED525

Marking：LED525；Package：IPAK；N-channel 525 V, 1.2 Ω typ., 5.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features •100avalanchetested •Extremelyhighdv/dtcapability •Verylowintrinsiccapacitance •Improveddiodereverserecovery characteristics •Zener-protected Applications •LEDlightingapplications Description ThesePowerMOSFETsboastextremelylowonresistance andveryg

STULED602

Marking：LED602；Package：IPAK；N-channel 600 V, 4 Ω typ., 2 A Power MOSFET in DPAK and IPAK packages

Features •100avalanchetested •Extremelyhighdv/dtcapability •Verylowintrinsiccapacitance •Improveddiodereverserecovery characteristics •Zener-protected Applications •LEDlightingapplication Description ThesePowerMOSFETsboastextremelylowonresistance, superiord

STULED624

Marking：LED624；Package：IPAK；N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features •100avalanchetested •Extremelyhighdv/dtcapability •Verylowintrinsiccapacitance •Improveddiodereverserecovery characteristics •Zener-protected Applications •LEDlightingapplications Description ThesePowerMOSFETsboastextremelylowonresistance, superior

STULED625H

Marking：LED625H；Package：IPAK；N-channel 650 V, 1.7 Ω typ., 4.5 A Power MOSFET in I2PAKFP, TO-220 and IPAK packages

Features •100avalanchetested •Extremelyhighdv/dtcapability •Gatechargeminimized •Verylowintrinsiccapacitance •Improveddiodereverserecovery characteristics •Zener-protected Applications •LEDlightingapplications Description ThesePowerMOSFETsboastextremelylow

TPSMB18A

Marking：LEP；Package：DO-214AA；Surface Mount Automotive Transient Voltage Suppressors

SurfaceMountPAR®TransientVoltageSuppressors HighTemperatureStabilityandHighReliabilityConditions FEATURES •Junctionpassivationoptimizeddesignpassivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityandautomotiverequirement •Availabl

TPSMBJ12A

Marking：LEA；Package：DO-214AA；11 To 170V 600W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 600Wpeakpulsepowercapabilitywitha10/1000μs waveform,repetitiverate(dutycycle):0.01 HighreliabilityapplicationandautomotivegradeAECQ101 qualified Lowleakage UniandBidirectionalunit Excellentclampingcapability Veryfastresponsetime P