KTB2955

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER)

HIGHPOWERAMPLIFIERAPPLICATION. FEATURES •ComplementarytoKTD3055. •Recommendedfor30Wᴕ35WAudioFrequency AmplifierOutputStage.

KTB2955

isc Silicon PNP Power Transistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-120V(Min) •ComplementtoTypeKTD3055 APPLICATIONS •Highpoweramplifierapplications •Recommendedfor30~35Waudiofrequencyamplifieroutputstageapplication.

KXF2955

P-ChannelMOSFET

KZT2955

2.0WSurfaceMountComplementaryPNPSiliconPowerTransistor

Features ●Highcurrent(max.6A). ●Lowvoltage(max.60V).

LTC2955

MicropowerHotSwapController

LTC2955

100VUV/OVandReverseProtectionControllerwithBidirectionalCircuitBreaker

LTC2955

PushbuttonOn/OffControllerwithAutomaticTurn-On

MJ2955

PNPPLANARSILICONTRANSISTOR(AUDIOPOWERAMPLIFIERDCTODCCONVERTER)

AUDIOPOWERAMPLIFIER DCTODCCONVERTER HighCurrentCapability HighPowerDissipation ComplementarytoMJ3055

MJ2955

POWERTRANSISTORS(15A,50V,115W)

MJ2955

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS115WATTS

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS115WATTS 2N3055(NPN)MJ2955(PNP) designedforgeneral–purposeswitchingandamplifierapplications. 1.DCCurrentGain—hFE=20–70@IC=4Adc 2.Collector–EmitterSaturationVoltage—VCE(sat)=1.1Vdc(Max)@IC=4Adc