EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) • High Speed Switching Time : tstg=1 S(Typ.) • Complementary to KTA1718D/L.

文件：405.48 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 50V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.5V(Max) @IC= 1A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：303.21 Kbytes 页数：3 Pages

ISC

无锡固电

EPITAXIAL PLANAR NPN TRANSISTOR

文件：411.12 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

Switching Transistor, DPAK, 50V, 2A

• Low Collector Saturation Voltage : VCE(sat)=0.5V(max.) (Ic=1A)\n• High Speed Switching Time : tstg=1.0ms(typ.)\n• Complementary to KTA1718D.;

KEC