EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)

HIGH CURRENT SWITCHING APPLICATION. FEATURES • Low Collector Emitter Saturation Voltage. : VCE(sat)=0.4V(Max.) (IC=4A) • High Current and High fT : IC=8A, fT=180MHz. • Excellent Linearity of hFE • High Speed Switching Time. : fT=20nS (Typ.) • Complementary to KTA1204D/L APPLICAT

文件：407.74 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.4V(Max) @IC= 4A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：282.63 Kbytes 页数：2 Pages

ISC

无锡固电

EPITAXIAL PLANAR NPN TRANSISTOR

HIGH CURRENT SWITCHING APPLICATION.FEATURES\n• Low Collector Emitter Saturation Voltage.\n   : VCE(sat)=0.4V(Max.) (IC=4A)\n• High Current and High fT\n   : IC=8A, fT=180MHz.\n• Excellent Linearity of hFE\n• High Speed Switching Time.\n   : fT=20nS (Typ.)\n• Complementary to KTA1204D/LAPPLICATION\n  • Low Collector Emitter Saturation Voltage.\n   : VCE(sat)=0.4V(Max.) (IC=4A)\n• High Current and High fT\n   : IC=8A, fT=180MHz.\n• Excellent Linearity of hFE\n• High Speed Switching Time.\n   : fT=20nS (Typ.)\n• Complementary to KTA1204D/LAPPLICATION\n   Relay drivers, high-speed inverters, conver;

KEC

开益禧

1.8 GHz LOW NOISE AMPLIFIER AND DOWNMIXER GaAs MONOLITHIC INTEGRATED CIRCUIT

Designed primarily for use in DECT, Japan Personal Handy Phone (JPHP), and other wireless Personal Communication Systems (PCS) applications. The MRFIC1804 includes a low noise amplifier and downmixer in a low-cost SOIC-16 package. The integrated circuit requires minimal off-chip matching while all

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MOTOROLA

摩托罗拉

Integrated Circuit Vertical Deflection Circuit for Large Screen TV

Description: The NTE1804 is an integrated circuit in a 13–Lead SIP type package designed for vertical deflection in video monitors and large screen color television receivers, e.g. 30AX and PIL–S4 systems. Features: Oscillator; Switch Capability for 50Hz/60Hz Operation Synchronizatio

文件：26.05 Kbytes 页数：3 Pages

NTE

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1804 is a switching device which can be driven directly by a 4.5 V power source. The µPA1804 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

文件：63.66 Kbytes 页数：8 Pages

NEC

瑞萨