EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING)

LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES • High breakdown voltage VCEO 120V, high current 1A. • Low saturation voltage and good linearity of hFE. • Complementary to KTA1045D/L

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KEC

KEC(Korea Electronics)

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 120V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.4V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

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ISC

无锡固电

EPITAXIAL PLANAR NPN TRANSISTOR

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KEC

KEC(Korea Electronics)

Bipolar Transistor

● High Breakdown Voltage VCEO 120V, High Current 1A.\n● Low Saturation Voltage and Good Linearity of hFE.\n. Complementary to KTA1045L.;

KEC