EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT CAMERA STROBO)

HIGH CURRENT APPLICATION CAMERA STROBO (For Electronic Flash Unit) FEATURES • Low Saturation Voltage : VCE(sat) = 0.4V(Max)(Ic=3A) • High Performance at Low Supply Voltage.

文件：398.09 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 20V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.4V(Max) @IC= 3A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：323.61 Kbytes 页数：3 Pages

ISC

无锡固电

EPITAXIAL PLANAR NPN TRANSISTOR

文件：403.73 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

General Purpose Transistor, IPAK, 20V, 5A

• General Purpose Application\n• Suitable for using Swtiching Application;

KEC