EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)

HIGH CURRENT SWITCHING APPLICATION. FEATURES • Low Collector Emitter Saturation Voltage. : VCE(sat)=0.4V(Max.) (IC=4A) • High Current and High fT : IC=8A, fT=180MHz. • Excellent Linearity of hFE • High Speed Switching Time. : fT=20nS (Typ.) • Complementary to KTA1204D/L APPLICAT

文件：407.74 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.4V(Max) @IC= 4A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：301.69 Kbytes 页数：2 Pages

ISC

无锡固电

Single/Dual/Quad 100V/ms, 85MHz, Rail-to-Rail Input and Output Op Amps

文件：401.32 Kbytes 页数：20 Pages

LINER

凌力尔特

Single/Dual/Quad 100V/s, 85MHz, Rail-to-Rail Input and Output Op Amps

文件：407.25 Kbytes 页数：20 Pages

LINER

凌力尔特

180MHz, 1mA Power Efficient Rail-to-Rail I/O Op Amps

FEATURES APPLICATIONS n Gain Bandwidth Product: 180MHz n –3dB Frequency (AV = 1): 120MHz n Low Quiescent Current: 1mA Max n High Slew Rate: 90V/μs n Input Common Mode Range Includes Both Rails n Output Swings Rail-to-Rail n Low Broadband Voltage Noise: 4.2nV/√Hz n Power-Down Mode: 42μA n

文件：752.67 Kbytes 页数：26 Pages

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