EPITAXIAL PLANAR NPN TRANSISTOR

LED DRIVE APPLICATION FEATURES • Adoption of MBIT processes. • Low collector-to-emitter saturation voltage. • Fast switching speed.

文件：58.28 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low collector-to-emitter saturation voltage. ·Fast switching speed

文件：331.08 Kbytes 页数：2 Pages

ISC

无锡固电

EPITAXIAL PLANAR NPN TRANSISTOR

文件：61.97 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

General Purpose Transistor, DPAK, 60V, 3A

• Adoption of MBIT processes \n• Fast switching speed;

KEC

开益禧