EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • High DC Current Gain : hFE=600 3600.

文件：395.14 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.25V(Max) @IC=100mA APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

文件：249.34 Kbytes 页数：2 Pages

ISC

无锡固电

TO-126 PACKAGE

文件：422.75 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)

High hFE Transistor, TO-126, 50V, 0.15A

• High DC Current Gain : hFE=600~3600.;

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TO-126 PACKAGE

文件：422.75 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

文件：400.77 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)