isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 60V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications

文件：330.54 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN transistor in a TO-252 Plastic Package.

Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features Low VCE(sat),complementary to KTA1040D. Applications General purpose amplifier for surface mount applications.

文件：911.96 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. • Complementary to KTA1040D

文件：1.06766 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE DPAK FOR SVRFACE MOUNT)

GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. • Straight Lead (IPAK, L Suffix) • Complementary to KTA1040D/L.

文件：399.18 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR NPN TRANSISTOR

文件：667.07 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

General Purpose Transistor, DPAK, 60V, 3A

• Low Collector Saturation Voltage : VCE(sat)=1.0V(max.) at Ic=2A, IB=0.2A\n• Straight Lead (IPAK, \"L\" Suffix)\n• Complementary to KTA1040D.;

KEC

开益禧

双极晶体管

BlueRocket

蓝箭电子