EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING)

LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES • High breakdown voltage VCEO 120V, high current 1A. • Low saturation voltage and good linearity of hFE. • Complementary to KTA1045D/L

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KEC

KEC(Korea Electronics)

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 120V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.4V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：304.25 Kbytes 页数：3 Pages

ISC

无锡固电

EPITAXIAL PLANAR NPN TRANSISTOR

文件：405.07 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

General Purpose Transistor, DPAK, 120V, 1A

• High Breakdown Voltage VCEO 120V, High Current 1A\n• Low Saturation Voltage and Good Linearity of hFE\n• Complementary to KTA1045D.;

KEC