EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) • High Speed Switching Time : tstg=1 S(Typ.) • Complementary to KTA1718D/L.

文件：405.48 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 50V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.5V(Max) @IC= 1A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：322.28 Kbytes 页数：3 Pages

ISC

无锡固电

HIGH RELIABILITY DC/DC CONVERTER

文件：168.44 Kbytes 页数：16 Pages

IRF

HIGH RELIABILITY DC/DC CONVERTER

文件：168.44 Kbytes 页数：16 Pages

IRF

HIGH RELIABILITY DC/DC CONVERTER

文件：168.44 Kbytes 页数：16 Pages

IRF