KTC3199

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERALPURPOSEAPPLICATION SWITCHINGAPPLICATION. FEATURES •HighDCCurrentGain:hFE=70~700. •ExcellenthFELinearity :hFE(0.1mA)/hFE(2mA)=0.95(Typ.). •LowNoise:NF=1dB(Typ.),10dB(Max.). •ComplementarytoKTA1267.

KTC3199

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features HighDCcurrentgain,excellenthFElinearity,lownoise,complementarytoKTA1267. Applications Generalamplifierandswitchingapplication.

KTC3199

TRANSISTOR (NPN)

FEATURES Powerdissipation PCM:400mW(Tamb=25℃) Collectorcurrent ICM:150mA Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

KTC3199

TO-92S Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●HighDCCurrentGain ●ComplementarytoKTA1267

KTC3199-BL

NPN General Purpose Application

Features •HighDCCurrentGain:hFE=70~700 •ExcellenthFELinearity:hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) •LowNoise:NF=1.0dB(Typ.),10dB(Max.) •ComplementarytoKTA1267 •Marking:C3199 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RoHSComp

KTC3199-GR

NPN General Purpose Application

Features •HighDCCurrentGain:hFE=70~700 •ExcellenthFELinearity:hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) •LowNoise:NF=1.0dB(Typ.),10dB(Max.) •ComplementarytoKTA1267 •Marking:C3199 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RoHSComp

KTC3199L

EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AUDIO AMPLIFIER)

LOWNOISEAUDIOAMPLIFIERAPPLICATION. FEATURES •HighDCCurrentGain:hFE=70ᴕ700. •ExcellenthFELinearity :hFE(0.1mA)/hFE(2mA)=0.95(Typ.). •LowNoise:NF=0.2dB(Typ.),3dB(Max.). •ComplementarytoKTA1267L.

KTC3199M

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features HighDCcurrentgain,excellenthFElinearity,lownoise. Applications Generalamplifierandswitchingapplication.

KTC3199-O

NPN General Purpose Application

Features •HighDCCurrentGain:hFE=70~700 •ExcellenthFELinearity:hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) •LowNoise:NF=1.0dB(Typ.),10dB(Max.) •ComplementarytoKTA1267 •Marking:C3199 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RoHSComp

KTC3199-Y

NPN General Purpose Application

Features •HighDCCurrentGain:hFE=70~700 •ExcellenthFELinearity:hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) •LowNoise:NF=1.0dB(Typ.),10dB(Max.) •ComplementarytoKTA1267 •Marking:C3199 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RoHSComp

KTC3199-BL

NPN General Purpose Application

KTC3199-GR

NPN General Purpose Application

KTC3199-O

NPN General Purpose Application

KTC3199-O_13

NPN General Purpose Application

KTC3199-Y

NPN General Purpose Application

KTC3199-GR-AP

包装：带盒（TB） 封装/外壳：TO-226-3，TO-92-3 短体（成形引线） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 50V 0.15A TO92S

KTC3199-O-AP

包装：带盒（TB） 封装/外壳：TO-226-3，TO-92-3 短体（成形引线） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 50V 0.15A TO92S

KTC3199-Y-AP

包装：带盒（TB） 封装/外壳：TO-226-3，TO-92-3 短体（成形引线） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 50V 0.15A TO92S

3199

233.9MHzBandpassFilter

3199

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