TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • High Breakdown Voltage : VCEO=-100V. • Low Collector-Emitter Saturation Voltage. : VCE(sat)=-2.0V(Max.) • Complementary to KTD525.

文件：276.08 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

KEC

开益禧

Silicon Diode, Dual, Common Cathode, High Speed

Description: The NTE595 consists of two silicon diodes in an SOT–23 type surface mount package. The cathodes are common and the device is intended for high–speed switching applications in thick and thin–film circuits.

文件：19.01 Kbytes 页数：2 Pages

NTE

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    

文件：203.21 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS

DESCRIPTION The SD1732 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in UHF and Band IV, V television transmitters and transposes. FEATURES SUMMARY ■ 470 - 860 MHz ■ 25 VOLTS ■ CLASS A PUSH PULL ■ DE

文件：68.93 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体