KTB1366

TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

GENERALPURPOSEAPPLICATION. FEATURES •LowCollectorSaturationVoltage :VCE(sat)=-1.0V(Max.)atIC=-2A,IB=-0.2A. •CollectorPowerDissipation :PC=25W(Tc=25ᴱ) •ComplementarytoKTD2058.

KTB1366

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●LowCollectorSaturationVoltage ●ComplementarytoKTD2058

KTB1366

isc Silicon PNP Power Transistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) •CollectorPowerDissipation- :PC=25W@TC=25℃ •LowCollectorSaturationVoltage- :VCE(sat)=-1.0V(Max)@(IC=-2A,IB=-0.2A) •ComplementtoTypeKTD2058 APPLICATIONS •Designedforgeneralpurposeap

KTB1366

Silicon PNP transistor in a TO-220F Plastic Package.

Descriptions SiliconPNPtransistorinaTO-220FPlasticPackage. Features Lowsaturationvoltage,complementarytoKTD2058. Applications Generalpurposeamplifier.

KTB1366

TRANSISTOR (PNP)

FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

KTB1366

Marking：KTB1366；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES LowCollectorSaturationVoltage ComplementarytoKTD2058

KTB1366_15

TRIPLE DIFFUSED PNP TRANSISTOR