丝印：KTB1366；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Collector Saturation Voltage Complementary to KTD2058

文件：1.02649 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：KTB1366；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Collector Saturation Voltage Complementary to KTD2058

文件：1.02649 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. • Collector Power Dissipation : PC=25W (Tc=25ᴱ) • Complementary to KTD2058.

文件：295.64 Kbytes 页数：2 Pages

KECKEC CORPORATION

KEC株式会社

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low Collector Saturation Voltage ● Complementary to KTD2058

文件：569.91 Kbytes 页数：2 Pages

JIANGSU

长电科技

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • Collector Power Dissipation- : PC= 25 W@ TC= 25℃ • Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) • Complement to Type KTD2058 APPLICATIONS • Designed for general purpose ap

文件：150.31 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP transistor in a TO-220F Plastic Package.

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features Low saturation voltage, complementary to KTD2058. Applications General purpose amplifier.

文件：1.13283 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：71.47 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

TRIPLE DIFFUSED PNP TRANSISTOR

文件：451.92 Kbytes 页数：2 Pages

KECKEC CORPORATION

KEC株式会社