TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). • Complementary to KTD2059.

文件：328.76 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • Collector Power Dissipation- : PC= 30W@ TC= 25℃ • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@ (IC= -4A, IB= -0.4A) • Complement to Type KTD2059 APPLICATIONS • Designed for general purpose ap

文件：149.5 Kbytes 页数：2 Pages

ISC

无锡固电

TO-220F Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low Collector-Emitter Saturation Voltage ● General Purpose Applications

文件：1.03755 Mbytes 页数：2 Pages

JIANGSU

长电科技

晶体管

JSCJ

长晶科技

TRIPLE DIFFUSED PNP TRANSISTOR

文件：451.54 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)