首页 >KST5551MTF_Q>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

MMBT5551

HighVoltageTransistors

HighVoltageTransistors FEATURE ●Wedeclarethatthematerialofproduct compliancewithRoHSrequirements.

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

MMBT5551

NPNTransistor

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半导体东莞市平晶半导体科技有限公司

MMBT5551

NPNGeneralPurposeTransistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable (MMBT5401). ●Alsoavailableinleadfreeversion. APPLICATIONS ●Idealformediumpoweramplificationandswitching.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

MMBT5551

TRANSISTOR(NPN)

BYTESONICBytesonic Electronics Co., Ltd.

百特森深圳市百特森电子有限公司

MMBT5551

TRANSISTOR(NPN)

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

MMBT5551

NPNSilicon

NPNSilicon

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

MMBT5551

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

YIXINShenzhen Yixinwei Technology Co., Ltd.

壹芯微深圳市壹芯微科技有限公司

MMBT5551

Plastic-EncapsulateTransistors

SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD.

赛尔斯深圳市赛尔斯科技有限公司

MMBT5551

SMDGeneralPurposeNPNTransistors

Features GeneralPurposeComplianttoRoHS,REACH,ConflictMinerals1) TypicalApplications Signalprocessing,Switching,AmplificationCommercialgrade1) MechanicalData1) Tapedandreeled3000/7“ Weightapprox.0.01g CasematerialUL94V-0 Solder&assemblyco

DiotecDIOTEC

德欧泰克

MMBT5551

HIGHVOLTAGESWITCHINGTRANSISTOR

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

MMBT5551

160VNPNSMALLSIGNALTRANSISTOR

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

MMBT5551

NPNGeneralPurposeTransistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable(MMBT5401). ●Alsoavailableinleadfreeversion. APPLICATIONS ●Idealformediumpoweramplificationandswitching.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

MMBT5551

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

MMBT5551

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

达尔科技

MMBT5551

HIGHVOLTAGESWITCHINGTRANSISTOR

■FEATURES *HighCollector-EmitterVoltage:VCEO=160V *Highcurrentgain

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

MMBT5551

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

FEATURES ●EpitaxialPlanarDieConstruction ●ComplementaryPNPTypeAvailable(MMBT5401). ●IdealforMediumPowerAmplificationandSwitching

TRSYS

Transys Electronics

MMBT5551

HighVoltageTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMBT5551

HighVoltageNPNTransistors

HighVoltageNPNTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

MMBT5551

NPNGeneralPurposeAmplifier

Description Thisdeviceisdesignedforgeneral-purposehigh-voltageamplifiersandgasdischargedisplaydrivers.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMBT5551

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT5401) •IdealforLowPowerAmplificationandSwitching •Lead,HalogenandAntimonyFree,RoHSCompliant •GreenDevice(Notes2and3)

DIODESDiodes Incorporated

达尔科技

详细参数

  • 型号:

    KST5551MTF_Q

  • 功能描述:

    两极晶体管 - BJT NPN Si Transistor Epitaxial

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
1535+
13594
询价
ON/安森美
23+
12000
询价
FSC/ON
23+
原包装原封□□
2983
原装进口特价供应QQ1304306553更多详细咨询库存
询价
FAIRCHI
2020+
SOT23
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
安森美
2002
SOP8
65000
原装正品假一罚万
询价
ON
1809+
SOT-23-3
16750
就找我吧!--邀您体验愉快问购元件!
询价
FAIRCHILDSEMICONDUCTOR
标准封装
58998
一级代理原装正品现货期货均可订购
询价
FAIRCHILD/仙童
22+
SOT-23
9600
原装现货,优势供应,支持实单!
询价
FAIRCHILD/仙童
21+
SOT23
10000
原装现货假一罚十
询价
更多KST5551MTF_Q供应商 更新时间2024-6-15 10:59:00