K4S561632C

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM

K4S561632C-L1H

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM

K4S561632C-L1L

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM

K4S561632C-L60

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM

K4S561632C-L75

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM

K4S561632C-L7C

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM

K4S561632C-TC

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM

K4S561632D

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S561632Dis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

K4S561632E

256MbE-dieSDRAMSpecification

GENERALDESCRIPTION TheK4S560432E/K4S560832E/K4S561632Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

K4S561632E

256MbE-dieSDRAMSpecification54pinsTSOP-II

GENERALDESCRIPTION TheK4S560432E/K4S560832Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththe