Consumer Memory

SDRAM Product Guide Memory Division November 2007

文件：542.54 Kbytes 页数：15 Pages

SAMSUNG

三星

256Mb J-die SDRAM Specification

General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

文件：297.93 Kbytes 页数：15 Pages

SAMSUNG

三星

SDRAM Product Guide

文件：153.79 Kbytes 页数：8 Pages

SAMSUNG

三星

256Mb J-die SDRAM Specification

General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

文件：297.93 Kbytes 页数：15 Pages

SAMSUNG

三星

256Mb J-die SDRAM Specification

General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

文件：297.93 Kbytes 页数：15 Pages

SAMSUNG

三星

256Mb J-die SDRAM Specification

General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

文件：297.93 Kbytes 页数：15 Pages

SAMSUNG

三星

256Mb J-die SDRAM Specification

General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

文件：297.93 Kbytes 页数：15 Pages

SAMSUNG

三星

256Mb J-die SDRAM Specification

General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

文件：297.93 Kbytes 页数：15 Pages

SAMSUNG

三星

256Mb J-die SDRAM Specification

General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

文件：297.93 Kbytes 页数：15 Pages

SAMSUNG

三星

256Mb J-die SDRAM Specification

General Description\nThe K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous • JEDEC standard 3.3V power supply\n• LVTTL compatible with multiplexed address\n• Four banks operation\n• MRS cycle with address key programs\n   -. CAS latency (2 & 3)\n   -. Burst length (1, 2, 4, 8 & Full page)\n   -. Burst type (Sequential & Interleave)\n• All inputs are sampled at the positive;

Samsung

三星