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K4S561633F

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

K4S561633F-C

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

K4S561633F-E

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

K4S561633F-F1H

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

K4S561633F-F1L

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

K4S561633F-F75

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

K4S561633F-G

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

K4S561633F-L

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

K4S561633F-N

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

K4S561633F-X

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

详细参数

  • 型号:

    K4S561633F

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

供应商型号品牌批号封装库存备注价格
SAMSUNG
24+
BGA
183
询价
SAMSUNG
23+
BGA
5000
原装正品,假一罚十
询价
SAMSUNG
17+
BGA
9888
全新进口原装,现货库存
询价
SAMSANG
19+
BGA
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
SEC
24+
BGA54
3629
原装优势!房间现货!欢迎来电!
询价
BGA
209
询价
SAMSUNG
23+
BGA
65480
询价
SAMSUNG/三星
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
SAMSUNG
2022
BGA
2300
原装现货,诚信经营!
询价
SAMSUNG/三星
21+
BGA
10000
原装现货假一罚十
询价
更多K4S561633F供应商 更新时间2025-5-23 10:02:00