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K4S561633F-X

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

K4S561633F-XE

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

K4S561633C-N

16Mx16SDRAM54CSP

SamsungSamsung semiconductor

三星三星半导体

K4S561633C-RBL

16Mx16SDRAM54CSP

SamsungSamsung semiconductor

三星三星半导体

K4S561633C-RL

16Mx16SDRAM54CSP

SamsungSamsung semiconductor

三星三星半导体

K4S561633F

4Mx16Bitx4BanksMobileSDRAMin54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

K4S561633F-C

4Mx16Bitx4BanksMobileSDRAMin54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

K4S561633F-E

4Mx16Bitx4BanksMobileSDRAMin54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

K4S561633F-G

4Mx16Bitx4BanksMobileSDRAMin54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

K4S561633F-L

4Mx16Bitx4BanksMobileSDRAMin54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung semiconductor

三星三星半导体

详细参数

  • 型号:

    K4S561633F-X

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

供应商型号品牌批号封装库存备注价格
SEC
23+
BGA
3500
绝对全新原装!现货!特价!请放心订购!
询价
SAMSUNG
17+
BGA
6200
100%原装正品现货
询价
SEC
BGA
1653
全新原装进口自己库存优势
询价
SEC
09+
BGA
5500
原装无铅,优势热卖
询价
SAMSUNG
2020+
BGA
10
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
SAMSUNG
2016+
BGA
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
SAMSUNG
16+
BGA
2500
进口原装现货/价格优势!
询价
05+
原厂原装
71
只做全新原装真实现货供应
询价
SEC
24+
BGA
6980
原装现货,可开13%税票
询价
SAMSUNG
24+
BGA
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
更多K4S561633F-X供应商 更新时间2025-7-28 16:31:00