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K4S561633F-XE

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung Group

三星三星半导体

K4S561633C-N

16Mx16SDRAM54CSP

SamsungSamsung Group

三星三星半导体

K4S561633C-RBL

16Mx16SDRAM54CSP

SamsungSamsung Group

三星三星半导体

K4S561633C-RL

16Mx16SDRAM54CSP

SamsungSamsung Group

三星三星半导体

K4S561633F

4Mx16Bitx4BanksMobileSDRAMin54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung Group

三星三星半导体

K4S561633F-C

4Mx16Bitx4BanksMobileSDRAMin54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung Group

三星三星半导体

K4S561633F-E

4Mx16Bitx4BanksMobileSDRAMin54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung Group

三星三星半导体

K4S561633F-G

4Mx16Bitx4BanksMobileSDRAMin54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung Group

三星三星半导体

K4S561633F-L

4Mx16Bitx4BanksMobileSDRAMin54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung Group

三星三星半导体

K4S561633F-N

4Mx16Bitx4BanksMobileSDRAMin54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung Group

三星三星半导体

K4S561633F-X

4Mx16Bitx4BanksMobileSDRAMin54BOC

GENERALDESCRIPTION TheK4S561633Fis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsa

SamsungSamsung Group

三星三星半导体

详细参数

  • 型号:

    K4S561633F-XE

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

供应商型号品牌批号封装库存备注价格
SEC
6000
面议
19
TSSOP
询价
SAMSUNG
2023+环保现货
FBGA
11739
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
SEC
23+
BGA
5500
原装无铅,优势热卖
询价
SAMSUNG
22+
BGA
10000
原装正品优势现货供应
询价
SAMSUNG
23+
TSOP54
5000
原装正品,假一罚十
询价
SAM
0407+
BGA
1
询价
SAMSUNG
2017+
BGA
45288
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
SEC
23+
BGA
3500
绝对全新原装!现货!特价!请放心订购!
询价
SAMSUNG
17+
BGA
6200
100%原装正品现货
询价
SAMSUNG
2020+
BGA
10
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多K4S561633F-XE供应商 更新时间2024-4-29 10:18:00