4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

文件：114.91 Kbytes 页数：12 Pages

SAMSUNG

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4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

文件：114.91 Kbytes 页数：12 Pages

SAMSUNG

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4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

文件：114.91 Kbytes 页数：12 Pages

SAMSUNG

三星

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

文件：114.91 Kbytes 页数：12 Pages

SAMSUNG

三星

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

文件：114.91 Kbytes 页数：12 Pages

SAMSUNG

三星

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

文件：114.91 Kbytes 页数：12 Pages

SAMSUNG

三星

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

文件：114.91 Kbytes 页数：12 Pages

SAMSUNG

三星

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

文件：114.91 Kbytes 页数：12 Pages

SAMSUNG

三星

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

文件：114.91 Kbytes 页数：12 Pages

SAMSUNG

三星

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

文件：114.91 Kbytes 页数：12 Pages

SAMSUNG

三星