K4S56163PF-RGSLASHF1L中文资料三星数据手册PDF规格书

GENERAL DESCRIPTION

The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.

FEATURES

• 1.8V power supply.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (8K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free).