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K4S561633F-L中文资料PDF规格书
K4S561633F-L规格书详情
GENERAL DESCRIPTION
The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FEATURES
• 3.0V & 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• Extended Temperature Operation (-25°C ~ 85°C).
• 54Balls BOC with 0.8mm ball pitch
( -X : Leaded, -Z : Lead Free).
产品属性
- 型号:
K4S561633F-L
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAM |
23+ |
NA |
12000 |
全新原装假一赔十 |
询价 | ||
SAMSUNG |
23+ |
BGA |
20000 |
原厂原装正品现货 |
询价 | ||
SAMSUNG |
2016+ |
FBGA |
6528 |
只做进口原装现货!或订货,假一赔十! |
询价 | ||
SAMSUNG |
2021+ |
BGA |
5010 |
原装正品假一罚十 |
询价 | ||
SAMSUNG |
2023+ |
BGA |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
SAMSUNG/三星 |
23+ |
BGA |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
05+ |
原厂原装 |
71 |
只做全新原装真实现货供应 |
询价 | |||
SEC |
22+ |
BGA |
6980 |
原装现货,可开13%税票 |
询价 | ||
SEC |
6000 |
面议 |
19 |
TSSOP |
询价 | ||
SEC |
05+ |
BGA |
52 |
原装现货海量库存欢迎咨询 |
询价 |