Consumer Memory

SDRAM Product Guide Memory Division November 2007

文件：542.54 Kbytes 页数：15 Pages

SAMSUNG

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256Mb N-die SDRAM

Samsung

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256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S561632A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

文件：127.17 Kbytes 页数：10 Pages

SAMSUNG

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256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

The K4S561632B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clo

文件：131.61 Kbytes 页数：11 Pages

SAMSUNG

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256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM

文件：116.95 Kbytes 页数：11 Pages

SAMSUNG

三星