256Mb E-die SDRAM Specification

GENERAL DESCRIPTION The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

文件：198.75 Kbytes 页数：14 Pages

SAMSUNG

三星

256Mb E-die SDRAM Specification 54pin sTSOP-II

GENERAL DESCRIPTION The K4S560432E / K4S560832E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4bits / 4 x 8,388,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the

文件：207.41 Kbytes 页数：13 Pages

SAMSUNG

三星

256Mb E-die SDRAM Specification

GENERAL DESCRIPTION The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

文件：198.75 Kbytes 页数：14 Pages

SAMSUNG

三星

256Mb E-die SDRAM Specification

GENERAL DESCRIPTION The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

文件：198.75 Kbytes 页数：14 Pages

SAMSUNG

三星

256Mb E-die SDRAM Specification

GENERAL DESCRIPTION The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

文件：198.75 Kbytes 页数：14 Pages

SAMSUNG

三星

256Mb E-die SDRAM Specification

GENERAL DESCRIPTION The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

文件：198.75 Kbytes 页数：14 Pages

SAMSUNG

三星

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

文件：198.76 Kbytes 页数：14 Pages

SAMSUNG

三星

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

文件：198.76 Kbytes 页数：14 Pages

SAMSUNG

三星

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

文件：198.76 Kbytes 页数：14 Pages

SAMSUNG

三星

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

文件：198.76 Kbytes 页数：14 Pages

SAMSUNG

三星