256Mb J-die SDRAM Specification

General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

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256Mb J-die SDRAM Specification

General Description The K4S560432J / K4S560832J / K4S561632J is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

文件：297.93 Kbytes 页数：15 Pages

SAMSUNG

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Consumer Memory

SDRAM Product Guide Memory Division November 2007

文件：542.54 Kbytes 页数：15 Pages

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4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

文件：114.03 Kbytes 页数：12 Pages

SAMSUNG

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4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

文件：114.03 Kbytes 页数：12 Pages

SAMSUNG

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4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

文件：114.03 Kbytes 页数：12 Pages

SAMSUNG

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4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

文件：114.03 Kbytes 页数：12 Pages

SAMSUNG

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4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

文件：114.03 Kbytes 页数：12 Pages

SAMSUNG

三星

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

文件：114.03 Kbytes 页数：12 Pages

SAMSUNG

三星

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

文件：114.03 Kbytes 页数：12 Pages

SAMSUNG

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