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K4S560832D-TC7C

32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION The Samsung M366S3253DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S325DCTS consists of eight CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy su

文件:159.58 Kbytes 页数:11 Pages

Samsung

三星

K4S560832D-TCSLASHL1H

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

文件:118.68 Kbytes 页数:11 Pages

Samsung

三星

K4S560832D-TCSLASHL1L

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

文件:118.68 Kbytes 页数:11 Pages

Samsung

三星

K4S560832D-TCSLASHL75

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

文件:118.68 Kbytes 页数:11 Pages

Samsung

三星

K4S560832D-TCSLASHL7C

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

文件:118.68 Kbytes 页数:11 Pages

Samsung

三星

K4S560832D-TL1H

32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION The Samsung M366S3253DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S325DCTS consists of eight CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy su

文件:159.58 Kbytes 页数:11 Pages

Samsung

三星

K4S560832D-TL1L

32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION The Samsung M366S3253DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S325DCTS consists of eight CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy su

文件:159.58 Kbytes 页数:11 Pages

Samsung

三星

K4S560832D-TL7A

32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION The Samsung M366S3253DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S325DCTS consists of eight CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy su

文件:159.58 Kbytes 页数:11 Pages

Samsung

三星

K4S560832D-TL7C

32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION The Samsung M366S3253DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S325DCTS consists of eight CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy su

文件:159.58 Kbytes 页数:11 Pages

Samsung

三星

K4S560832E-NC75

256Mb E-die SDRAM Specification 54pin sTSOP-II

GENERAL DESCRIPTION The K4S560432E / K4S560832E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4bits / 4 x 8,388,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the

文件:207.41 Kbytes 页数:13 Pages

Samsung

三星

详细参数

  • 型号:

    K4S56

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

供应商型号品牌批号封装库存备注价格
SAM
23+
TSOP
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
SAM
24+
TSOP54
60
询价
SAMSUNG
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
SAMSUNG/三星
2022+
71
全新原装 货期两周
询价
Samsung
25+
35
公司优势库存 热卖中!!
询价
SAMSUNG/三星
23+
TSOP-54
5000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
SAM
2023+环保现货
TSOP/54
4425
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
SAMSUNG
2025+
TSOP
5378
全新原厂原装产品、公司现货销售
询价
SAMSUNG
24+
TSOP54
6980
原装现货,可开13%税票
询价
SAMSUNG
2023+
TSOP
50000
原装现货
询价
更多K4S56供应商 更新时间2025-12-25 17:37:00