Consumer Memory

SDRAM Product Guide Memory Division November 2007

文件：542.54 Kbytes 页数：15 Pages

Samsung

三星

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：126.92 Kbytes 页数：10 Pages

Samsung

三星

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：131.52 Kbytes 页数：11 Pages

Samsung

三星

256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560832C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are pos

文件：113.09 Kbytes 页数：11 Pages

Samsung

三星