丝印：K4N；Package：SOT-323；NPN Transistors

■ Features ● Small Surface Mount Package ● Ideal for Medium Power Amplification and Switching ● Complementary to MMST5401

文件：368.42 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：K4N；Package：SOT-323；Plastic-Encapsulate Transistors

FEATURE Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version Complementary to MMBT5401W

文件：321.53 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：K4N；Package：SOT-363；NPNNPN Plastic-Encapsulate Transistors

FEATURES • Epoxy meets UL-94 V-0 flammability rating • Complementary to MMDT5401 • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching

文件：1.44705 Mbytes 页数：5 Pages

JINGHENG

晶恒

丝印：K4N；Package：SOT-363；Epitaxial Planar Die Construction

Features Epitaxial Planar Die Construction Complementary PNP Type Available (MMDT5401) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3)

文件：772.06 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：K4N；Package：SOT-363；SOT-363 Plastic-Encapsulate Transistors

Features Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching

文件：1.40655 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：K4N；Package：SOT-363；Plastic-Encapsulate Transistors

FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching

文件：396.73 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：K4N；Package：SOT-323；SOT-323 Plastic-Encapsulate Transistors

FEATURES Complementary to MMST5401 Small Surface Mount Package Ideal for Medium Power Amplification and Switching

文件：1.82698 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：K4N；Package：SOT-323；NPN Transistors

■ Features ● Small Surface Mount Package ● Ideal for Medium Power Amplification and Switching ● Complementary to MMST5401

文件：368.42 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：K4N；Package：SOT-323；NPN General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMST5401). ● Also available in lead free version. APPLICATIONS ● Ideal for medium power amplification and switching.

文件：157.73 Kbytes 页数：3 Pages

BILIN

银河微电

丝印：K4N；Package：S-TOGL；MOSFETs Silicon N-channel MOS

Applications • Automotive • Switching Voltage Regulators • Motor Drivers • DC-DC Converters Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 0.8 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to

文件：600.63 Kbytes 页数：10 Pages

TOSHIBA

东芝