Miniature size, non-inductive, epoxy dip coated

文件：239.74 Kbytes 页数：2 Pages

JBCAPACITORS

捷邦行

JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 页数：29 Pages

TI

德州仪器

JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 页数：29 Pages

TI

德州仪器

丝印：2GLW；Package：SOT-23；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 页数：29 Pages

TI

德州仪器

丝印：2GLW；Package：SOT-23；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 页数：29 Pages

TI

德州仪器

丝印：1IF；Package：SC70；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 页数：29 Pages

TI

德州仪器

丝印：1IF；Package：SC70；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 页数：29 Pages

TI

德州仪器

JFE2140 Ultra-Low Noise, Matched, Dual, Low-Gate Current, Discrete, Audio, N‑Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.9 nV/√Hz at 1 kHz, IDS = 5 mA • 1.1 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.6 fA/√Hz at 1 kHz • Low VGS mismatch: 4 mV (max) • Low gate current: 10 pA (max) • Low input capacitance: 13 pF at VDS = 5 V • High gate-to-drain and gate-

文件：2.51478 Mbytes 页数：33 Pages

TI

德州仪器

JFE2140 Ultra-Low Noise, Matched, Dual, Low-Gate Current, Discrete, Audio, N‑Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.9 nV/√Hz at 1 kHz, IDS = 5 mA • 1.1 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.6 fA/√Hz at 1 kHz • Low VGS mismatch: 4 mV (max) • Low gate current: 10 pA (max) • Low input capacitance: 13 pF at VDS = 5 V • High gate-to-drain and gate-

文件：2.51478 Mbytes 页数：33 Pages

TI

德州仪器

丝印：JF2140；Package：SOIC；JFE2140 Ultra-Low Noise, Matched, Dual, Low-Gate Current, Discrete, Audio, N‑Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.9 nV/√Hz at 1 kHz, IDS = 5 mA • 1.1 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.6 fA/√Hz at 1 kHz • Low VGS mismatch: 4 mV (max) • Low gate current: 10 pA (max) • Low input capacitance: 13 pF at VDS = 5 V • High gate-to-drain and gate-

文件：2.51478 Mbytes 页数：33 Pages

TI

德州仪器