JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 页数：29 Pages

TI

德州仪器

JFE150 Ultra-Low Noise, Low Gate Current, Audio, N-Channel JFET

文件：1.86478 Mbytes 页数：25 Pages

TI

德州仪器

超低噪声、低栅极电流、音频、N 沟道 JFET

The JFE150 is a Burr-Brown™ discrete JFET built using Texas Instruments’ modern, high-performance, analog bipolar process. The JFE150 features performance not previously available in older discrete JFET technologies. The JFE150 offers the maximum possible noise-to-power efficiency and flexibility, w • Ultra-low noise: \n• 0.8 nV/√Hz at 1 kHz, IDS = 5 mA\n• Current noise: 1.8 fA/√Hz at 1 kHz\n• Low gate current: 10 pA (max)\n• High gate-to-drain and gate-to-source breakdown voltage: –40 V \n• Packages: Small SC70 and SOT-23 (Preview);

TI

德州仪器

JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 页数：29 Pages

TI

德州仪器

丝印：2GLW；Package：SOT-23；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 页数：29 Pages

TI

德州仪器

丝印：2GLW；Package：SOT-23；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 页数：29 Pages

TI

德州仪器

丝印：1IF；Package：SC70；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 页数：29 Pages

TI

德州仪器

丝印：1IF；Package：SC70；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 页数：29 Pages

TI

德州仪器

丝印：1IF；Package：SC70；JFE150 Ultra-Low Noise, Low Gate Current, Audio, N-Channel JFET

文件：1.86478 Mbytes 页数：25 Pages

TI

德州仪器

丝印：1IF；Package：SC70；JFE150 Ultra-Low Noise, Low Gate Current, Audio, N-Channel JFET

文件：1.86478 Mbytes 页数：25 Pages

TI

德州仪器