JFE150DCKT分立半导体产品的晶体管-JFET规格书PDF中文资料

JFE150DCKT属于分立半导体产品的晶体管-JFET。由德州仪器制造生产的JFE150DCKT晶体管 - JFET结栅场效应晶体管 (JFET) 是用作电子控制开关、放大器或电压控制电阻器的器件。在栅极端子与源极端子之间施加适当极性的电势差就会增加电流流动的阻力，这意味着源极端子与漏极端子之间通道中流动的电流会更少。由于电荷流过源极与漏极端子之间的半导体通道，因此 JFET 不需要偏置电流。

1 Features

• Ultra-low noise:

– Voltage noise:

• 0.8 nV/√Hz at 1 kHz, IDS = 5 mA

• 0.9 nV/√Hz at 1 kHz, IDS = 2 mA

– Current noise: 1.8 fA/√Hz at 1 kHz

• Low gate current: 10 pA (max)

• Low input capacitance: 24 pF at VDS = 5 V

• High gate-to-drain and gate-to-source breakdown

voltage: –40 V

• High transconductance: 68 mS

• Packages: Small SC70 and SOT-23

2 Applications

• Microphone inputs

• Hydrophones and marine equipment

• DJ controllers, mixers, and other DJ equipment

• Professional audio mixer or control surface

• Guitar amplifier and other music instrument

amplifier

• Condition monitoring sensor

3 Description

The JFE150 is a Burr-Brown™ discrete JFET built

using Texas Instruments' modern, high-performance,

analog bipolar process. The JFE150 features

performance not previously available in older discrete

JFET technologies. The JFE150 offers the maximum

possible noise-to-power efficiency and flexibility,

where the quiescent current can be set by the user

and yields excellent noise performance for currents

from 50 μA to 20 mA. When biased at 5 mA, the

device yields 0.8 nV/√Hz of input-referred noise,

giving ultra-low noise performance with extremely

high input impedance (> 1 TΩ). The JFE150 also

features integrated diodes connected to separate

clamp nodes to provide protection without the addition

of high-leakage, nonlinear, external diodes.

The JFE150 can withstand a high drain-to-source

voltage of 40 V, as well as gate-to-source and gateto-

drain voltages down to –40 V. The temperature

range is specified from –40°C to +125°C. The device

is offered in 5-pin SOT-23 and SC70 packages.