JFE150DCKT分立半导体产品的晶体管-JFET规格书PDF中文资料

1 Features

• Ultra-low noise:

– Voltage noise:

• 0.8 nV/√Hz at 1 kHz, IDS = 5 mA

• 0.9 nV/√Hz at 1 kHz, IDS = 2 mA

– Current noise: 1.8 fA/√Hz at 1 kHz

• Low gate current: 10 pA (max)

• Low input capacitance: 24 pF at VDS = 5 V

• High gate-to-drain and gate-to-source breakdown

voltage: –40 V

• High transconductance: 68 mS

• Packages: Small SC70 and SOT-23

2 Applications

• Microphone inputs

• Hydrophones and marine equipment

• DJ controllers, mixers, and other DJ equipment

• Professional audio mixer or control surface

• Guitar amplifier and other music instrument

amplifier

• Condition monitoring sensor

3 Description

The JFE150 is a Burr-Brown™ discrete JFET built

using Texas Instruments' modern, high-performance,

analog bipolar process. The JFE150 features

performance not previously available in older discrete

JFET technologies. The JFE150 offers the maximum

possible noise-to-power efficiency and flexibility,

where the quiescent current can be set by the user

and yields excellent noise performance for currents

from 50 μA to 20 mA. When biased at 5 mA, the

device yields 0.8 nV/√Hz of input-referred noise,

giving ultra-low noise performance with extremely

high input impedance (> 1 TΩ). The JFE150 also

features integrated diodes connected to separate

clamp nodes to provide protection without the addition

of high-leakage, nonlinear, external diodes.

The JFE150 can withstand a high drain-to-source

voltage of 40 V, as well as gate-to-source and gateto-

drain voltages down to –40 V. The temperature

range is specified from –40°C to +125°C. The device

is offered in 5-pin SOT-23 and SC70 packages.