JFE150数据手册分立半导体产品的晶体管-JFET规格书PDF

描述 Description

The JFE150 is a Burr-Brown™ discrete JFET built using Texas Instruments’ modern, high-performance, analog bipolar process. The JFE150 features performance not previously available in older discrete JFET technologies. The JFE150 offers the maximum possible noise-to-power efficiency and flexibility, where the quiescent current can be set by the user and yields excellent noise performance for currents from 50 µA to 20 mA. When biased at 5 mA, the device yields 0.8 nV/√Hz of input-referred noise, giving ultra-low noise performance with extremely high input impedance (> 1 TΩ). The JFE150 also features integrated diodes connected to separate clamp nodes to provide protection without the addition of high leakage, nonlinear external diodes.

The JFE150 can withstand a high drain-to-source voltage of 40-V, as well as gate-to-source and gate-to-drain voltages down to –40 V. The temperature range is specified from –40°C to +125°C. The device is offered in 5-pin SOT-23 and SC-70 packages.

特性 Features

• Ultra-low noise:
• Voltage noise:
• 0.8 nV/√Hz at 1 kHz, IDS = 5 mA
• 0.9 nV/√Hz at 1 kHz, IDS = 2 mA

• Current noise: 1.8 fA/√Hz at 1 kHz

• Low gate current: 10 pA (max)
• Low input capacitance: 24 pF at VDS = 5 V
• High gate-to-drain and gate-to-source breakdown voltage: –40 V
• High transconductance: 68 mS
• Packages: Small SC70 and SOT-23 (Preview)