丝印：2GLW；Package：SOT-23；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 页数：29 Pages

TI

德州仪器

丝印：2GLW；Package：SOT-23；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.8 nV/√Hz at 1 kHz, IDS = 5 mA • 0.9 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.8 fA/√Hz at 1 kHz • Low gate current: 10 pA (max) • Low input capacitance: 24 pF at VDS = 5 V • High gate-to-drain and gate-to-source breakdown voltage: –4

文件：1.90725 Mbytes 页数：29 Pages

TI

德州仪器