JFE2140 Ultra-Low Noise, Matched, Dual, Low-Gate Current, Discrete, Audio, N‑Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.9 nV/√Hz at 1 kHz, IDS = 5 mA • 1.1 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.6 fA/√Hz at 1 kHz • Low VGS mismatch: 4 mV (max) • Low gate current: 10 pA (max) • Low input capacitance: 13 pF at VDS = 5 V • High gate-to-drain and gate-

文件：2.51478 Mbytes 页数：33 Pages

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JFE2140 Ultra-Low Noise, Matched, Dual, Low-Gate Current, Discrete, Audio, N?멌hannel JFET

文件：2.01952 Mbytes 页数：28 Pages

TI

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双路、超低噪声、低栅极电流、音频、N 沟道 JFET

The JFE2140 is a Burr-Brown™ matched-pair discrete JFET built using Texas Instruments’ modern, high-performance, analog bipolar process. The JFE2140 features performance not previously available in older discrete JFET technologies. The JFE2140 offers excellent noise performance across all current ra • Ultra-low noise: \n• 0.9 nV/√Hz at 1 kHz, IDS = 5 mA\n• Current noise: 1.6 fA/√Hz at 1 kHz\n• Low VGS mismatch: 4 mV (max)\n• Low input capacitance: 13 pF at VDS = 5 V \n• High transconductance: 30 mS \n• Packages: SOIC, 2-mm × 2-mm WSON (Preview);

TI

德州仪器

JFE2140 Ultra-Low Noise, Matched, Dual, Low-Gate Current, Discrete, Audio, N‑Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.9 nV/√Hz at 1 kHz, IDS = 5 mA • 1.1 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.6 fA/√Hz at 1 kHz • Low VGS mismatch: 4 mV (max) • Low gate current: 10 pA (max) • Low input capacitance: 13 pF at VDS = 5 V • High gate-to-drain and gate-

文件：2.51478 Mbytes 页数：33 Pages

TI

德州仪器

丝印：JF2140；Package：SOIC；JFE2140 Ultra-Low Noise, Matched, Dual, Low-Gate Current, Discrete, Audio, N‑Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.9 nV/√Hz at 1 kHz, IDS = 5 mA • 1.1 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.6 fA/√Hz at 1 kHz • Low VGS mismatch: 4 mV (max) • Low gate current: 10 pA (max) • Low input capacitance: 13 pF at VDS = 5 V • High gate-to-drain and gate-

文件：2.51478 Mbytes 页数：33 Pages

TI

德州仪器

丝印：2J9U；Package：WSON；JFE2140 Ultra-Low Noise, Matched, Dual, Low-Gate Current, Discrete, Audio, N‑Channel JFET

1 Features • Ultra-low noise: – Voltage noise: • 0.9 nV/√Hz at 1 kHz, IDS = 5 mA • 1.1 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.6 fA/√Hz at 1 kHz • Low VGS mismatch: 4 mV (max) • Low gate current: 10 pA (max) • Low input capacitance: 13 pF at VDS = 5 V • High gate-to-drain and gate-

文件：2.51478 Mbytes 页数：33 Pages

TI

德州仪器

丝印：JF2140；Package：SOIC；JFE2140 Ultra-Low Noise, Matched, Dual, Low-Gate Current, Discrete, Audio, N?멌hannel JFET

文件：2.01952 Mbytes 页数：28 Pages

TI

德州仪器

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - JFET 描述：DUAL, ULTRA-LOW NOISE, LOW GATE

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