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MGW20N120

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGY20N120D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGY20N120D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

NGTB20N120IHLWG

Incorporatedintothedeviceisaruggedco?뭦ackagedfreewheelingdiodewithalowforwardvoltage.

ONSEMION Semiconductor

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NGTB20N120IHRWG

IGBTwithMonolithicFreeWheelingDiode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NGTB20N120IHSWG

IGBT

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NGTB20N120IHWG

IGBT-InductionCooking

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NGTB20N120LWG

Incorporatedintothedeviceisaruggedco?뭦ackagedfreewheelingdiodewithalowforwardvoltage.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

SCM20N120PCT

1200V/20mΩN-channelSiCPowerMOSFET

Features Lowon-resistanceRDS(on) Bestthermalconductivityandbehavior Highspeedswitching Highrobustnessofdv/dt Lowcapacitancesandlowgatecharge Lowgateresistanceforhigh-frequencyswitching Easytoparallel HalogenFree,RoHSCompliant Applications Switchingmodepower

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

SCM20N120PS

1200V/20mΩN-channelSiCPowerMOSFET

Features Lowon-resistanceRDS(on) Bestthermalconductivityandbehavior Highspeedswitching Highrobustnessofdv/dt Lowcapacitancesandlowgatecharge Lowgateresistanceforhigh-frequencyswitching Easytoparallel HalogenFree,RoHSCompliant Applications Switchingmodepower

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

详细参数

  • 型号:

    IXFX20N120P

  • 功能描述:

    MOSFET 26 Amps 1200V 1 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS/艾赛斯
23+
TO-247 PLUS
52388
原装正品 华强现货
询价
IXYS
1931+
N/A
18
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IXYS
1809+
TO-247
326
就找我吧!--邀您体验愉快问购元件!
询价
IXYS
22+
NA
18
加我QQ或微信咨询更多详细信息,
询价
IXYS
22+
TO2473
9000
原厂渠道,现货配单
询价
IXYS/艾赛斯
23+
PLUS247
6000
原装正品,支持实单
询价
IXYS
2022+
TO-247-3
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IXYS/艾赛斯
22+
PLUS247
25000
只做原装进口现货,专注配单
询价
IXYS(艾赛斯)
23+
N/A
7500
IXYS(艾赛斯)全系列在售
询价
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
询价
更多IXFX20N120P供应商 更新时间2025-7-26 8:31:00