SCM20N120PS

1200V /20 mΩ N-channel SiC Power MOSFET

Features Lowon-resistanceRDS(on) Bestthermalconductivityandbehavior Highspeedswitching Highrobustnessofdv/dt Lowcapacitancesandlowgatecharge Lowgateresistanceforhigh-frequencyswitching Easytoparallel HalogenFree,RoHSCompliant Applications Switchingmodepower

SCT20N120

Veryhighoperatingtemperaturecapability

Description ThissiliconcarbidePowerMOSFETisproducedexploitingtheadvanced,innovativepropertiesofwidebandgapmaterials.Thisresultsinunsurpassedon-resistanceperunitareaandverygoodswitchingperformancealmostindependentoftemperature.Theoutstandingthermalpropertiesof

SCT20N120AG

Automotive-gradesiliconcarbidePowerMOSFET1200V,20A,189m廓(typ.,TJ=150째C),inanHiP247package

SCT20N120H

SiliconcarbidePowerMOSFET1200V,20A,189mΩ(typ.,TJ=150°C),inanH²PAK-2package

Features •Verytightvariationofon-resistancevs.temperature •Veryhighoperatingjunctiontemperaturecapability(TJ=175°C) •Veryfastandrobustintrinsicbodydiode •Lowcapacitance Applications •Solarinverters,UPS •Motordrives •HighvoltageDC-DCconverters •Switch

SCT20N120H

SiCN-ChannelMOSFET

FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·HighSpeedSwitchingwithLowCapacitances ·EasytoParallelandSimpletoDrive ·AvalancheRuggedness APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·High-voltageDC/DCConverters ·Motordrives

SGH20N120RUF

ShortCircuitRatedIGBT

SGH20N120RUFD

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw

TRS20N120HB

SiCSchottkyBarrierDiode

Applications •PowerFactorCorrection •SolarInverters •UninterruptiblePowerSupplies •DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF(PerLeg)=1.27V(typ.) (3)Lowtotalcapacitivecharge:Qc(PerLeg)=57nC(typ.) (4)Lowreversecurre