Very high operating temperature capability

Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of

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STMICROELECTRONICS

意法半导体

丝印：SCT20N120；Package：H2PAK-2；Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package

Features • Very tight variation of on-resistance vs. temperature • Very high operating junction temperature capability (TJ = 175 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Solar inverters, UPS • Motor drives • High voltage DC-DC converters • Switch

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STMICROELECTRONICS

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碳化硅功率MOSFET，1200 V、20 A、189 mOhm（典型值，Tj = 150 C），HiP247封装

该碳化硅功率MOSFET晶体管是利用宽禁带半导体材料的先进和创新特性生产出来的。因此，器件具有每区域无可比拟的导通状态电阻，以及卓越的开关性能，随温度变化极小。碳化硅（SiC）材料具有出色的热性能，与独有的HiP247™封装的器件外壳相结合，使设计人员能够采用符合行业标准的设计，显著提高器件的散热能力。这些特性使器件非常适用于高效率和高功率密度应用。 • 导通电阻随温度变化敏感温度 \n• 开关损耗随温度变化极小温度 \n• 适应非常高的工作温度(200°C) \n• 稳定的超快速本体二极管 \n• 低电容 \n• 易于驱动;

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SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·High Speed Switching with Low Capacitances ·Easy to Parallel and Simple to Drive ·Avalanche Ruggedness APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage DC/DC Converters ·Motor drives

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ISC

无锡固电

丝印：SCT20N120AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 m廓 (typ., TJ=150 째C), in an HiP247 package

文件：487.52 Kbytes 页数：13 Pages

STMICROELECTRONICS

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汽车级碳化硅功率MOSFET，1200 V、20 A、189 mOhm（典型值，Tj = 150 C），HiP247封装

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC materia • AEC-Q101 qualified \n• Very tight variation of on-resistance vs. temperature \n• Very high operating temperature capability (TJ = 200 °C) \n• Very fast and robust intrinsic body diode \n• Low capacitance;

ST

意法半导体

碳化硅功率MOSFET，1200 V、20 A、189 mOhm（典型值，Tj = 150 C），HiP247封装

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC materia • Very tight variation of on-resistance vs. temperature \n• Very fast and robust intrinsic body diode \n• Low capacitance;

ST

意法半导体