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SCT20N120AG数据手册ST中文资料规格书
SCT20N120AG规格书详情
描述 Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
特性 Features
• AEC-Q101 qualified
• Very tight variation of on-resistance vs. temperature
• Very high operating temperature capability (TJ = 200 °C)
• Very fast and robust intrinsic body diode
• Low capacitance
技术参数
- 制造商编号
：SCT20N120AG
- 生产厂家
：ST
- Package
：HIP247
- Grade
：Automotive
- VDSS_nom(V)
：1200
- Drain Current (Dc)_max(A)
：20
- RDS(on)_max(@ VGS=20V)(Ω)
：0.239
- PTOT_max(W)
：175
- Qg_typ(nC)
：45
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST |
2511 |
原厂原封 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ROHM |
17+ |
TO220-3 |
300 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ROHM |
1726+ |
TO-220 |
6528 |
只做进口原装正品现货,假一赔十! |
询价 | ||
ST |
23+ |
原厂原封 |
16900 |
正规渠道,只有原装! |
询价 | ||
Rohm |
25+ |
TO-TO-220AB |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
ROHM/罗姆 |
23+ |
TO-220AB |
6000 |
原装正品假一罚百!可开增票! |
询价 | ||
ST |
23+ |
HIP247 |
8000 |
原装正品!假一罚十! |
询价 | ||
ROHM/罗姆 |
22+ |
TO-220AB |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 |
